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Determination of the Indirect Exciton Energy Gap of GaP Using Thermomodulation in the Temperature Range 80 to 350 K
Author(s) -
Beckmann A.,
Dettmer K.,
Kessler F. R.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221590223
Subject(s) - phonon , exciton , range (aeronautics) , band gap , atmospheric temperature range , absorption edge , atomic physics , condensed matter physics , spectral line , absorption (acoustics) , physics , energy (signal processing) , materials science , optics , quantum mechanics , thermodynamics , composite material
Thermoabsorption studies were performed of the first indirect band edge of n‐GaP in the temperature range from 80 to 350 K. The energy of the indirect exciton bandgap and its temperature dependence are determined from the thermoabsorption spectra. The temperature dependence is fitted to Varshni's equation as well as to an expression containing the Einstein‐Bose statistical factors for phonon absorption and emission. The energies of the involved phonons are deduced from the energy difference between the transitions with absorption and emission of a particular phonon: E (TA) = (13.2 ± 0.2) meV, E (LA) = (29.6 ± 0.7) meV, and E (TO) = (43.5 ± 0.3) meV.