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Influence of Level Broadening in Mobility Calculations for Low‐Dimensional Semiconductor Heterostructures
Author(s) -
Leon H.,
Comas F.,
Suhrke M.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221590220
Subject(s) - heterojunction , condensed matter physics , degenerate energy levels , scattering , relaxation (psychology) , semiconductor , electron mobility , phonon scattering , phonon , momentum (technical analysis) , quantum , materials science , quantum well , physics , quantum mechanics , optoelectronics , psychology , social psychology , laser , finance , economics
The influence of constant level broadening in momentum‐relaxation rate and low‐field mobility calculations is investigated if acoustic‐phonon scattering, via deformation‐potential (DP) and piezoelectric (PZ) coupling, is present in low‐dimensional semiconductor heterostructures such as quantum wires or quantum wells. An approach is developed using the quasi‐particle approximation on the basis of the method of Kadanoff and Baym. Calculations are done in the low carrier concentration case, neglecting screening effects and using non‐degenerate carrier statistics. The role of PZ scattering is established and comparison with earlier results is made.