Premium
Adsorption of H 2 O (Molecular and Dissociative) on Si(100) and Si(111) Surfaces Considered by an Empirical Pair Potential Method
Author(s) -
Engler C.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221590219
Subject(s) - adsorption , dissociation (chemistry) , dissociative , molecule , chemistry , potential energy , silicon , computational chemistry , materials science , chemical physics , atomic physics , physics , organic chemistry , medicine , pharmacology
The adsorption of H 2 O on Si(100) and Si(111) surfaces is examined by an empirical method, which connects pair potential considerations with the BEBO‐concept. For both surfaces, only small energetic differences between molecular SiH 2 O and dissociative SiH and SiOH species are obtained, which lie within the margin of error of the method. For the dissociation process of adsorbed H 2 O‐molecules on Si(100)−(2 × 1), the course of the total energy along a possible reaction path is discussed.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom