Premium
Optical Properties of Multi‐Layer Structures. III. Raman Scattering in Multi‐Layer Structures and Superlattices
Author(s) -
Fomin V. M.,
Pokatilov E. P.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221590218
Subject(s) - phonon , superlattice , raman scattering , raman spectroscopy , materials science , polarization (electrochemistry) , dielectric , scattering , condensed matter physics , semiconductor , layer (electronics) , x ray raman scattering , optics , optoelectronics , physics , chemistry , nanotechnology
Abstract The theory of Raman scattering is extended over multi‐layer structures with any number of semiconductor and dielectric layers; the explanation is based on the modulation transfer matrices. The location and configuration of Raman peaks are calculated as functions of the polarization of incident and scattered radiation caused by different types of oscillatory excitations in superlattices by spatially extended interface phonons, spatially decreasing phonons and “confined” bulk phonons.