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High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region
Author(s) -
Presser N.,
Kudlek G.,
Gutowski J.,
Durbin S. M.,
Menke D. R.,
Kobayashi M.,
Gunshor R. L.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221590152
Subject(s) - photoluminescence , exciton , spectroscopy , excitation , materials science , luminescence , photoluminescence excitation , substrate (aquarium) , semiconductor , molecular beam epitaxy , optoelectronics , molecular physics , condensed matter physics , epitaxy , chemistry , physics , nanotechnology , oceanography , layer (electronics) , quantum mechanics , geology
ZnSe epilayers grown by MBE on (100) GaAs substrates are optically investigated in comparison with bulk ZnSe crystals using photoluminescence and excitation spectroscopy under high excitation densities. High‐density luminescence bands appear in both materials for relatively low excitation densities (about 30 kW/cm 2 ), but their energetic positions do not correspond. The intensity‐dependent shape, and the behaviour of the dominant band in bulk ZnSe in excitation spectroscopy are similar to that of the M band in other II VI semiconductors. The main bands growing up in the ZnSe/GaAs films are much more corresponding to typical P‐band emission of exciton‐exciton collision. Further, the transmission of ZnSe epilayers released from the GaAs substrate is studied in dependence on the laser intensity.