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Experimental Investigation of Three‐Level Optical Stark Effect in Semiconductors
Author(s) -
Fröhlich D.,
Neumann Ch.,
Uebbing B.,
Wille R.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221590135
Subject(s) - exciton , stark effect , quadrupole , atomic physics , excited state , coupling (piping) , semiconductor , conduction band , dipole , laser , spectral line , physics , condensed matter physics , chemistry , molecular physics , materials science , optics , optoelectronics , quantum mechanics , electron , metallurgy
The three‐level optical Stark effect is due to a dynamical coupling of two excited levels. The coupling is achieved by a high intensity CO 2 laser. Results of experiments on multiple quantum wells (MQW) and excitons in Cu 2 O are presented. In the MQW the coupling between the two lowest conduction band sublevels leads to characteristic changes in the one‐photon spectra of the lowest exciton transitions. In Cu 2 O the CO 2 laser pulse couples 1 S and 2 P excitons. In this case the one‐photon spectrum of the 2 P exciton (dipole allowed) and also of the 1 S spectrum (quadrupole allowed) show drastic changes. Most of the experimental results can be explained quantitatively in terms of a nonlinear susceptibility.