Experimental Investigation of Three‐Level Optical Stark Effect in Semiconductors | Zendy

Fröhlich D. | Zendy; Neumann Ch. | Zendy; Uebbing B. | Zendy; Wille R. | Zendy

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Experimental Investigation of Three‐Level Optical Stark Effect in Semiconductors

Author(s) -

Fröhlich D.,

Neumann Ch.,

Uebbing B.,

Wille R.

Publication year - 1990

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221590135

Subject(s) - exciton , stark effect , quadrupole , atomic physics , excited state , coupling (piping) , semiconductor , conduction band , dipole , laser , spectral line , physics , condensed matter physics , chemistry , molecular physics , materials science , optics , optoelectronics , quantum mechanics , electron , metallurgy

The three‐level optical Stark effect is due to a dynamical coupling of two excited levels. The coupling is achieved by a high intensity CO 2 laser. Results of experiments on multiple quantum wells (MQW) and excitons in Cu 2 O are presented. In the MQW the coupling between the two lowest conduction band sublevels leads to characteristic changes in the one‐photon spectra of the lowest exciton transitions. In Cu 2 O the CO 2 laser pulse couples 1 S and 2 P excitons. In this case the one‐photon spectrum of the 2 P exciton (dipole allowed) and also of the 1 S spectrum (quadrupole allowed) show drastic changes. Most of the experimental results can be explained quantitatively in terms of a nonlinear susceptibility.

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