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Multistability of Absorption Domains in Bulk CdS Due to Band Edge Nonlinearities
Author(s) -
Stadnik V. A.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221590128
Subject(s) - multistability , condensed matter physics , attenuation coefficient , absorption edge , instability , absorption (acoustics) , nonlinear system , materials science , saturation (graph theory) , semiconductor , optics , band gap , physics , optoelectronics , quantum mechanics , mathematics , combinatorics
The domain instability phenomenon in semiconductors of CdS are investigated. Multistability of high absorption states is explained by features of the nonlinear behaviour of the absorption coefficient and the longitudinal transport of photoexcitations. It is shown that for the explanation of the observed effects besides the thermal mechanism of the nonlinearity the process of the saturation of the excitonic absorption should be taken into account.