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Optical Nonlinearities of GaAs‐Based Epitaxial Structures for All‐Optical Switching
Author(s) -
Oudar J. L.,
Sfez B.,
Kuszelewicz R.,
Michel J. C.,
Azoulay R.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221590120
Subject(s) - finesse , epitaxy , bistability , optical bistability , optoelectronics , materials science , saturation (graph theory) , resonator , quantum well , optics , reflectivity , optical power , optical cavity , fabry–pérot interferometer , nonlinear optics , laser , physics , nanotechnology , wavelength , mathematics , layer (electronics) , combinatorics
An experimental study is made of GaAs/AlGaAs monolithic bistable etalons fabricated by metalorganic vapor‐phase epitaxy. Optical bistability is observed in the reflective mode, with a minimum threshold power of less than 3 mW and a switching contrast as high as 30: 1, with a cavity resonator designed to achieve simultaneously a high finesse and a high reflectivity contrast. The dispersive optical nonlinearity of the multiple quantum well active medium is measured as a function of the intracavity intensity, and a strong saturation behavior is observed. The origin of this saturation and its implication on the design of future devices is discussed briefly.