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Absorption and Optical Gain Spectra and Band Gap Renormalization of Highly Excited Quantum Well Systems
Author(s) -
Ell C.,
Haug H.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221590113
Subject(s) - renormalization , random phase approximation , excited state , physics , spectral line , coulomb , quantum well , effective mass (spring–mass system) , scattering , condensed matter physics , quantum , absorption (acoustics) , atomic physics , band gap , quantum mechanics , optics , laser , electron
Optical spectra of highly excited quantum well systems are calculated. Many‐body effects are included within the random phase approximation (RPA). In order to describe a realistic semiconductor quantum well system, finite barrier heights, a thickness‐dependent Coulomb potential and several subbands are taken into account. Furthermore, for quantum well systems like InP/InGaAs or GaAlAs/GaAs, light and heavy hole subbands are included within an effective mass approximation. The renormalization of the band gaps of the allowed transitions are discussed and compared with experimental data of Lach et al. In the range of very high densities deviations between experiment and theory are found, which are probably due to increased intersubband scattering.