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Auger Recombination in Heavily Doped Semiconductors
Author(s) -
Quang Doan Nhat
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221580228
Subject(s) - auger , auger effect , doping , excitation , atomic physics , semiconductor , phonon , impurity , valence (chemistry) , acceptor , condensed matter physics , materials science , chemistry , physics , optoelectronics , organic chemistry , quantum mechanics
A theory is developed of the Auger recombination in a heavily doped semiconductor, taking into account the influence of the random inpurity field. For various recombination processes, general analytic expressions of the Auger coefficients are derived, which describe the effect of the random field in explicit dependence on the doping concentration, compensation, and excitation levels as well. The degeneracy and screening effects of non‐equilibrium carriers are shown to be of great importance. It is found that the Auger coefficients may be strongly enhanced due to the impurity field up to several orders of magnitude at high doping concentration and low excitation level. The numerical evaluation on p‐type GaAs indicates especially that in the case of low temperature (77 K) and high acceptor concentration (> 10 19 cm −3 ) the random field effect on the valence band process is predominant over that caused by the phonon. Moreover, in a n‐type material the valence band process is predominant over that caused by the phonon. Moreover, in a n‐type material the valence band process might be competable with the conduction band one even at weak excitation.