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Antisite Defects in SiAlAs/GaAs Modulation‐Doped Superlattices
Author(s) -
Wang EnGe,
Zhang LiYuan,
Wang HuaiYu,
Jin WeiMin
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221580220
Subject(s) - superlattice , materials science , doping , modulation (music) , condensed matter physics , impurity , electronic structure , optoelectronics , physics , quantum mechanics , acoustics
The electronic structure and binding energy of the antisite defects Ga As and AS Ga in SiAlAs/GaAs modulation‐doped superlattices are calculated with use of the developed recursion technique. A detailed comparison between the antisites and impurities in the multilayer systems is presented based on the discussion of the local density of states and the electronic occupation possibilities on each defect site. The results are used to explain recent experiments.