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A Contribution to Reversed Transport
Author(s) -
Gerlach E.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221580214
Subject(s) - semiconductor , scattering , drag , electric field , energy transport , physics , generalization , condensed matter physics , electron mobility , carrier scattering , materials science , optoelectronics , optics , mechanics , engineering physics , quantum mechanics , mathematics , mathematical analysis
A generalization of the energy‐loss transport concept including carrier‐carrier scattering is applied to a periodic arrangement of pairs of conducting films. It is shown that for certain parameters a metal‐p‐semiconductor system should exhibit reversed transport (carrier‐drag) in the semiconductor, i. e. the holes move in the opposite direction relative to the external electric field.
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