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Diamagnetic Susceptibility of a Donor in a GaAs/Ga 1− x Al x As Quantum Well Heterostructure and Its Pressure Dependence
Author(s) -
Sukumar B.,
Navaneethakrishnan K.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221580118
Subject(s) - diamagnetism , superlattice , condensed matter physics , heterojunction , electron , dielectric , ionization energy , chemistry , magnetic field , ionization , effective mass (spring–mass system) , atomic physics , lattice constant , binding energy , materials science , ion , physics , optoelectronics , organic chemistry , quantum mechanics , optics , diffraction
The diamagnetic susceptibility (χ din ) of a donor in the GaAs quanturn well of the GaAs/Ga 1− x Al x As heterostructure is calculated for a well of infinite strength. The binding energy of the donor electron in different magnetic fields is computed variationally and the χ dia values estimated using the Langevin expression. It is found that as the well width increases the χ dia values also increase, Using the pressure dependence of the effective mass, dielectric constant, and lattice constant of GaAs, the donor ionization energies are estimated for different pressures of 50 × 10 8 , 150 × 10 8 , and 200 × 10 8 Pa applied along the growth axis of the superlattice. It is shown that both, the ionization energies and χ dia values increase with pressure for a given well width. Also the ionization energy decreases with increasing well width in the presence of both, pressure and magnetic field.