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The Behaviour of the Hydrogen‐Localized Vibrational Mode in Proton‐Implanted GaAs
Author(s) -
Wang L. P.,
Zhang L. Z.,
Zhu W. X.,
Lu X. T.,
Qin G. G.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221580110
Subject(s) - laser linewidth , hydrogen , proton , absorption (acoustics) , infrared , atomic physics , materials science , molecular vibration , crystal (programming language) , infrared spectroscopy , chemistry , analytical chemistry (journal) , optics , molecule , physics , laser , organic chemistry , quantum mechanics , computer science , composite material , programming language , chromatography
A hydrogen‐induced infrared absorption band located around 1835.4 cm −1 is observed in protonimplanted GaAs single crystal at 4.2 K and identified as a hydrogen localized vibrational mode (LVM). The dependence of absorption intensity, linewidth, and frequency of the hydrogen LVM on temperature is presented for the first time. Both, the linewidth and frequency shift due to temperature variation are much larger than those of the hydrogen‐vibration in GaAs observed by Cleriaud et al. A structure model for hydrogen LVM in proton‐implanted GaAs is suggested.