Surface Relief and Dissipation Influence on Plasmon–Phonon Polariton Dispersion of Polar Semiconductors | Zendy

Dmitruk N. L. | Zendy; Fidrya N. A. | Zendy; Snitko O. V. | Zendy; Venger E. F. | Zendy

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Surface Relief and Dissipation Influence on Plasmon–Phonon Polariton Dispersion of Polar Semiconductors

Author(s) -

Dmitruk N. L.,

Fidrya N. A.,

Snitko O. V.,

Venger E. F.

Publication year - 1990

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221570211

Subject(s) - polariton , surface plasmon polariton , attenuation , materials science , phonon , dispersion (optics) , surface plasmon , condensed matter physics , surface phonon , surface roughness , surface finish , semiconductor , plasmon , dissipation , optics , optoelectronics , physics , composite material , thermodynamics

The effect of the surface roughness by plasmon‐phonon attenuation on the surface mixed polariton (SP) dispersion is theoretically investigated. It is shown that the dispersions curve displacement is a nonmonotonous function of the attenuation in the presence of surface roughness. Epitaxial n–n + GaAs layers are investigated experimentally by the ATR method.

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