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Investigation of Electron Mobility in a Two‐Dimensional Electron Gas. GaAs–Al x Ga 1− x As Heterostructures, Application of the Hydrostatic Pressure Method
Author(s) -
Kończewicz L.,
LitwinStaszewska E.,
Maslowska A.,
Piotrzkowski R.,
Robert J. L.,
André J. P.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221570210
Subject(s) - hydrostatic pressure , heterojunction , electron mobility , electron , fermi gas , hydrostatic equilibrium , materials science , condensed matter physics , scattering , range (aeronautics) , helium , atmospheric temperature range , chemistry , atomic physics , optoelectronics , thermodynamics , physics , optics , composite material , quantum mechanics
Hydrostatic pressure experiments are a very useful tool for 2D electron transport effect investigations as they allow the electronic properties of the heterojunction to be precisely modified without changing the intrinsic properties of the material. The hydrostatic pressure technique is applied in 2D gas mobility investigations in GaAlAs/GaAs heterojunctions in liquid helium temperature range. The experimental mobility versus 2D electron concentration and temperature dependences are compared with the theoretical predictions and it is shown that the mobility variations are generally described by the scattering by charged centers in the GaAlAs layer.