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Excited Acceptor States in II–VI and III–V Semiconductors
Author(s) -
Said M.,
Kanehisa M. A.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221570132
Subject(s) - excited state , acceptor , cadmium telluride photovoltaics , dielectric , semiconductor , chemistry , atomic physics , materials science , physics , condensed matter physics , optoelectronics
Higher excited states of acceptors in CdTe, ZnTe, and GaAs are obtained by using the Baldereschi and Lipari spherical model including the cubic correction and the central‐cell effect. This is done by solving the coupled radial equations by the finite‐element method with Arnoldi's algorithm, which gives several (≈ 20) low‐lying states simultaneously. The procedure permits to determine very accurately the host band‐structure parameters. In the case of II–VI compounds, the Luttinger parameters γ 1 = 5.30, γ 2 = 1.62, γ 3 = 2.10 and the dielectric constant ϵ 0 = 9.3 for CdTe and, γ 1 = 3.80, γ 2 = 0.86, γ 3 = 1.32 and ϵ 0 = 9.4 for ZnTe are obtained. For GaAs, γ 1 = 7.20, γ 2 = 2.15, γ 3 = 3.05, and ϵ 0 = 12.49 are obtained.