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Interfacial Capacitance
Author(s) -
Krupski J.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221570119
Subject(s) - capacitance , condenser (optics) , reflection (computer programming) , materials science , thin film , specular reflection , layer (electronics) , thin layer , optics , condensed matter physics , optoelectronics , chemistry , composite material , physics , nanotechnology , computer science , electrode , light source , programming language
An analysis is made of experimental results on the capacitance of thin‐film condensers. To find the screened electrostatic potential in a three layer structure a specular electron reflection model is employed which takes into account quantum effects. The resulting interfacial capacitance is in semiquantitative agreement with the measured value for the thin‐film Al–Al 2 O 3 –Al condenser.