Premium
A Contribution to DC Transport in Thin Bi Films
Author(s) -
Gerlach E.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221570118
Subject(s) - scattering , thin film , substrate (aquarium) , ion , materials science , carrier scattering , condensed matter physics , electron scattering , electron , chemistry , physics , optics , nanotechnology , quantum mechanics , oceanography , geology
A generalization of the energy‐loss transport concept, which includes carrier–carrier‐scattering, is applied to a thin (two‐dimensional) Bi‐film deposited on an e.g. CaF 2 ‐substrate. In particular, scattering by ions is considered and by charge density fluctuations. An additional scattering channel is taken into account by a scattering frequency ω τ . If the concentrations of electrons and holes are about equal, the resulting resistance of the Bi‐film at not too low temperatures is governed by scattering by fluctuations.