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Amplification of Acoustic Waves in Magnetised High Resistivity Piezoelectric Semiconductors. Effect of Nonuniform Electric Field Intensity and Carrier Concentration
Author(s) -
Dey Bose M.,
Ghosh S.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221570115
Subject(s) - electric field , piezoelectricity , condensed matter physics , semiconductor , electrical resistivity and conductivity , magnetic field , attenuation , physics , intensity (physics) , field (mathematics) , transverse plane , materials science , optics , acoustics , optoelectronics , mathematics , quantum mechanics , pure mathematics , structural engineering , engineering
A theory of the amplification of an acoustic wave in a high resistivity piezoelectric semiconductor in the presence of a longitudinal dc electric field and a transverse magnetostatic field is developed. The static electric field intensity and the carrier concentration inside the semiconductor are taken as nonuniform even in trap‐free samples. This assumption used in the theory modifies the results obtained by the earlier theories considerably. It is also shown that this nonuniformity can explain the experimentally found asymmetric attenuation characteristic curves. Numerical estimations are made for n‐CdS at 300 K. It is found that a weak magnetic field does not have any remarkable effect on amplification, but a higher magnetic field sharply reduces the gain.