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Microscopic Model of Metastable Changes in Hydrogenated Amorphous Silicon
Author(s) -
Chen Y. F.,
Wong C. K.
Publication year - 1990
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221570108
Subject(s) - metastability , dangling bond , amorphous solid , materials science , silicon , amorphous silicon , irradiation , photoluminescence , condensed matter physics , chemical physics , crystallography , atomic physics , crystalline silicon , chemistry , physics , metallurgy , optoelectronics , nuclear physics , organic chemistry
Concepts based on the two‐level system of structural excitations have not accounted satisfactorily for many metastable changes in hydrogenated amorphous silicon. Defects created at higher temperatures are more difficult to anneal out. Photoluminescence decreases much more after irradiation at 77 K than it does after irradiation at 300 K. After rapid cooling from 483 K, the spin signal grows with time at room temperature, etc. A microscopic explanation of these and other phenomena is given in terms of a three‐level system of structural excitations: initial state, weak SiSi bond; intermediate metastable state, SiHSi bond; final metastable state, SiH and Si dangling bond.