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Impurity Scattering in Weakly Compensated Gapless Semiconductors at Low Temperatures
Author(s) -
Mikheev V. M.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221560221
Subject(s) - scattering , gapless playback , cluster (spacecraft) , acceptor , impurity , condensed matter physics , semiconductor , charge (physics) , materials science , electrical resistivity and conductivity , chemistry , physics , optoelectronics , optics , organic chemistry , quantum mechanics , computer science , programming language
An anomalous decrease in mobility with rising temperature is attributed to the contribution by scattering on acceptor–donor pairs. The change in the concentration of acceptor–donor pairs is related to the merging of pairs into large entities — “clusters”. In the case of “clusters” the scattering on charge fluctuations is essential which is more effective than that on individual pairs. An increase in cluster volume with rising temperature results in lower mobility. Within the framework of the model suggested, the electrical conductivity is calculated numerically for a material that has the parameters of HgCdTe. The results of numerical calculations agree well with experiment.