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Dislocation Recharging in Plastically Deformed Crystals of the A 2 B 6 Type
Author(s) -
Vardanyan R. A.,
Veselko S. G.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221560216
Subject(s) - polaron , dislocation , condensed matter physics , absorption edge , ion , adiabatic process , electron , phonon , dislocation creep , deformation (meteorology) , ionization , crystal (programming language) , materials science , atomic physics , molecular physics , chemistry , physics , quantum mechanics , band gap , composite material , computer science , programming language
The quantum transition of weakly coupled electrons from the ion to the self‐localized condenson (acoustic polaron) state on the dislocation is discussed for the case when during the plastic deformation of the crystal such ion appears in the space‐charged region of the edge dislocation. In terms of the adiabatic approximation the electron–phonon interaction is taken into account. It is shown that this interaction reduces to the multiquantum fluctuational phonon radiation and absorption in the initial and final states. The probability of the dislocation recharging elementary act is a function of the temperature, the electon–phonon interaction constant, and the distance between ion and dislocation. By numerical calculation the effectiveness for the recharging process is found for semiconductive A 2 B 6 ‐compounds as a function of the deformation rate, the ionization energy of ion, the temperature, and the electrostatic field of the edge dislocation.