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Electron and Positron Distribution for the Plane (1 1 10) in Si and GaAs
Author(s) -
Aourag H.,
Khelifa B.,
Belaidi A.,
Kobayasi T.,
West R. N.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221560213
Subject(s) - pseudopotential , positron , wave function , electron , diamond , semiconductor , plane wave , physics , position (finance) , electronic band structure , plane (geometry) , particle (ecology) , atomic physics , condensed matter physics , materials science , quantum mechanics , mathematics , geometry , finance , economics , composite material , oceanography , geology
Abstract The electron and positron charge densities are calculated as a function of position in the unit cell for two diamond and zincblende semiconductors, using wave functions derived from nonlocal pseudopotential band structure calculations for the electronic part, and the positron wave functions are calculated for single‐particle approximation in manner which is free of any theoretical assumptions.