Interband Critical Point Parameters Determined by Ellipsometry in Cd  x  Hg 1− x  Se | Zendy

Kumazaki K. | Zendy; Viña L. | Zendy; Umbach C. | Zendy; Cardona M. | Zendy

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Interband Critical Point Parameters Determined by Ellipsometry in Cd x Hg 1− x Se

Author(s) -

Kumazaki K.,

Viña L.,

Umbach C.,

Cardona M.

Publication year - 1989

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221560138

Subject(s) - ellipsometry , analytical chemistry (journal) , dielectric , dielectric function , chemical composition , materials science , chemistry , thin film , nanotechnology , organic chemistry , optoelectronics , chromatography

The dielectric function of Cd x Hg 1− x Se crystals, with x = 0 to 0.30, is measured by ellipsometry at room temperature between 1.8 and 5.5 eV. The E 1 and E 1 + Δ 1 gaps and the Δ 1 spin—orbit splitting show a upwards quadratic dependence on composition. The broadening of the observed structures increases with x due to alloying effects and disorder or to the difference in chemical activity of the surfaces. The results are discussed in comparison with those obtained for Zn x Hg 1− x Se and Cd x Hg 1− x Te.

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