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Transient Response of Hot Electrons in Semiconductor Quantum Well Wires
Author(s) -
Mulimani B. G.,
Ramakrishna C. H.,
Krishnamurthy B. S.,
Sarkar C. K.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221560125
Subject(s) - electron , semiconductor , condensed matter physics , relaxation (psychology) , momentum (technical analysis) , lattice (music) , physics , quantum wire , transient (computer programming) , electric field , distribution function , materials science , atomic physics , quantum mechanics , psychology , social psychology , finance , computer science , acoustics , economics , operating system
Transient response of hot electrons in quantum well wires of a polar semiconductor to a step electric field is studied using the displaced‐Maxwellian distribution function and the energy and momentum balance conditions. Numerical results are given for the variation of drift velocity and electron temperature with time for parameters characteristic of GaAs. Momentum relaxation is found to be faster than the energy relaxation. Also, both the relaxation rates are found to increase with the increase of lattice temperature and become faster with the decrease of transverse dimension of the wire.