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Electron Energy Structure and Optical Properties of Microcrystalline Silicon
Author(s) -
Gavrilenko V. I.,
Humliček J.,
Klyui N. I.,
Litovchenko V. G.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221550244
Subject(s) - microcrystalline silicon , microcrystalline , recrystallization (geology) , silicon , materials science , amorphous solid , chemical vapor deposition , dielectric , amorphous silicon , nanocrystalline silicon , optoelectronics , electron , crystalline silicon , chemical physics , crystallography , chemistry , physics , paleontology , quantum mechanics , biology
Spectroellipsometry and electroreflectance are used to determine the dielectric functions and the direct optical transition energies in microcrystalline silicon produced by chemical vapor deposition and by recrystallization of amorphous silicon. Changes in the optical gaps depending on the average microcrystallite volume are found. These results are interpreted with a tight binding model which incorporates the virtual crystal approximation.