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Intersubband Raman Scattering in Size‐Quantized Narrow‐Gap Semiconductor Films
Author(s) -
Okulski W.,
Załużny M.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221550242
Subject(s) - raman scattering , discrete dipole approximation , scattering , semiconductor , cross section (physics) , physics , dipole , condensed matter physics , x ray raman scattering , band gap , effective mass (spring–mass system) , quadrupole , optics , raman spectroscopy , quantum mechanics
Abstract The problem of the influence of c‐v mixing on the intersubband Raman scattering in size‐quantized narrow‐gap semiconductor films is considered in the framework of the two‐band effective mass approximation. An expression for the scattering cross section is derived in the infinite deep square well model employing the dipole approximation. A comparison with the results obtained in the one‐band effective mass approximation by Genkin and Sokolov is given. The quadrupole correction to the scattering cross section is also dicussed.