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Electronic Properties of Vacancy‐Induced Structures in AlAs/GaAs Superlattices
Author(s) -
Wang EnGe,
Zhang LiYuan,
Wang HuaiYu
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221550229
Subject(s) - superlattice , vacancy defect , condensed matter physics , acceptor , materials science , conduction band , ion , impurity , electronic structure , valence (chemistry) , atom (system on chip) , band gap , chemistry , electron , physics , organic chemistry , quantum mechanics , computer science , embedded system
For the first time a detailed description is presented of electronic properties in (AlAs) n /(GaAs) n ( n = 1, 3) superlattices with different vacancies. The local‐ and partial‐DOS of the vacancy neighbor atoms are calculated within the tight‐binding approximation including nearest and next‐nearest neighbor interactions. The shift of the band‐edge in the point‐defect structures is about 0.14 eV, which is very similar to that of bulk GaAs material and confirm that the top of the valence‐band of these kind of thin superlattices is derived from the As anion p states, and the bottom of the conduction‐band from the Ga or Al cation. Also a negative center is found around a group‐III atom vacancy in the bulk and a local field, which is similar to that of an acceptor impurity, across the interface. A comparison with AlAs/GaAs superlattices with and without impurities is given.