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Structural Network and Some Photoelectrical and Optical Parameters of Amorphous Hydrogenated Silicon
Author(s) -
Golikova O. A.,
Grekhov A. M.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221550217
Subject(s) - photoconductivity , amorphous silicon , materials science , raman spectroscopy , fermi level , silicon , cluster (spacecraft) , fermi gamma ray space telescope , basis (linear algebra) , density of states , hydrogen , amorphous solid , condensed matter physics , chemistry , optoelectronics , physics , optics , crystallography , crystalline silicon , mathematics , electron , quantum mechanics , geometry , organic chemistry , computer science , programming language
The results of an experimental study of a‐Si: H films are presented: dark and photoconductivity hydrogen concentration and SiH 2 /SiH ratio, optical gap, and Raman frequency. The deposition temperature is shown to be the main factor of the transformation of the density of localized states and corresponding shifts of the Fermi level. Theoretical calculations are made of the model of SiHSi bonds in the cluster approximation. The results concerning the Fermi level shifts are interpreted on the basis of this model.