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Characterization of Microdefects in Silicon by Means of X‐Ray Reflection Curves
Author(s) -
Holý V.,
Kubéna J.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221550202
Subject(s) - silicon , reflection (computer programming) , crystal (programming language) , characterization (materials science) , materials science , x ray , scattering , crystallography , optics , monocrystalline silicon , physics , chemistry , nanotechnology , optoelectronics , computer science , programming language
Microdefects in an annealed Czochralski‐grown silicon crystal have been studied by means of X‐ray double crystal diffractometry. Comparing the reflection curves measured at various places of the crystal with those computed on the basis of the theory published in previous papers the effective defect size, their density, and the defect strength are determined. The results are compared with those obtained from the experimental curves using the conventional kinematical theory of diffuse X‐ray scattering.