Premium
The Shape of the Multi‐Plasmon Radiation Band in Direct Gap Semiconductors
Author(s) -
Klyukanov A. A.,
Senokosov E. A.,
Chibotaru L. E.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221550131
Subject(s) - plasmon , bohr radius , absorption edge , localized surface plasmon , absorption (acoustics) , surface plasmon , physics , atomic physics , condensed matter physics , band gap , optics , molecular physics , exciton
The form‐functions of the multi‐plasmon light absorption spectra are obtained using the fluctuation‐dissipation theorem. Transitions with photon and plasmon absorption leads to the absorption edge shift into the longwavelength spectrum region obeying Urbach's rule. It is shown, that the ground state exciton interaction with plasmons is weak due to the smallness of the Bohr radius compared to the Debye screening radius. The band shape of the multi‐plasmon own radiation of the nondegenerative electron—hole plasma is calculated. Multiplasmon transitions are direct ones whereas the radiation band consists of the superposition of equidistant Maxwell bands being apart from each other by the plasmon frequency. The amount of the multi‐plasmon satellites depends on the value of the plasma emission constant and plasma temperature. Indirect multiplasmon transitions lead to more abrupt radiation intensity decay at the short wave edge of the band. It is shown that plasmon dispersion leads to the shift of the peak value positions of the single‐plasmon satellites. The theory of multi‐plasmon transitions in semiconductors developed with account of the LO phonon replicas coincides with experimental data.