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Electroreflectance Lineshape of Step‐Like Doped GaAs Structures
Author(s) -
Goldhahn R.,
Röppischer H.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221540236
Subject(s) - superposition principle , doping , substrate (aquarium) , semiconductor , layer (electronics) , materials science , enhanced data rates for gsm evolution , electric field , absorption (acoustics) , optoelectronics , spectral line , absorption edge , modulation (music) , absorption spectroscopy , condensed matter physics , optics , nanotechnology , band gap , physics , composite material , telecommunications , oceanography , quantum mechanics , astronomy , computer science , acoustics , geology
For a semiconductor structure consisting of a homogeneously doped layer on a lower‐doped substrate of the same material the electroreflectance lineshape at the fundamental absorption edge is studied by model calculations. With the electric field penetrating into the substrate a characteristic superposition of the two partial spectra arising from the differently doped semiconductor regions is found. The change of the lineshape simulated for a GaAs structure in dependence on the modulation conditions and layer thickness is confirmed by electroreflectance measurements using successive layer removal. From the applied voltage producing first spectrum modification the thickness of the top layer can be estimated.