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Quantum 1/ f Noise Associated with Intervalley Scattering in Nondegenerate Semiconductors. I. Analytical Calculations
Author(s) -
Kousik G. S.,
van Vliet C. M.,
Bosman G.,
Luo HorngJye
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221540230
Subject(s) - physics , scattering , condensed matter physics , noise (video) , boltzmann equation , photon , relaxation (psychology) , coupling (piping) , electron , quantum mechanics , materials science , psychology , social psychology , artificial intelligence , computer science , metallurgy , image (mathematics)
Scattering of charged particles is accompanied by the emission of soft photons. Quantum theory of 1/ f noise, based on the infrared quasi‐divergent coupling of the system to the electromagnetic field, indicates that the current associated with a beam of scattered charged particles exhibits 1/ f noise. Based on this quantum theory the previously obtained results are extended for mobility fluctuations to include mobility fluctuations due to intervalley f‐ and g‐type processes. The fluctuations in the scattering rates are derived, and these are related to the mobility fluctuations through the relaxation time solutions of the Boltzmann transport equation. Hooge's law for 1/ f noise is derived and explicit expressions are obtained for the mobility fluctuations due to intervalley scattering. This is then applied to n‐type silicon to arrive at the overall Hooge parameter, α H , as a function of temperature. It is found that the intervalley scattering processes do contribute little to the mobility, but are quite significant for the noise. The contribution to the noise is significant because of the large changes in the electron wavevector associated with intervalley scattering processes. Excellent agreement with well known experimental results is observed for the mobility as well as the Hooge‐parameter.