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Critical Behaviour of n‐ZnSe Parameters in the Vicinity of the Metal—Insulator Transition
Author(s) -
Kasiyan V. A.,
Nedeoglo D. D.,
Simashkevich A. V.,
Timchenko I. N.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221540228
Subject(s) - condensed matter physics , metal–insulator transition , impurity , doping , dielectric , materials science , critical exponent , scaling , conductivity , permittivity , transition metal , electron localization function , electron , electrical resistivity and conductivity , physics , phase transition , chemistry , quantum mechanics , biochemistry , geometry , optoelectronics , mathematics , catalysis
The critical behaviour of the parameters of n‐ZnSe is studied near the metal—insulator (M–I) transition obtained by variation of compensation degree or concentration of shallow donor impurity. It is found that the localization radius of the electron wave function, dielectric permittivity, density of states at the Fermi level as well as several other parameters characterizing the conductivity at the dielectric side of the transition are continuously varied over the critical region of the transition according to the scaling theory of localization. It is shown, that the critical concentration and critical indices for the M–I transition obtained by doping have somewhat lower values than that for the transition produced by compensation. The compensation smeares out the M–I transition and makes the concentration dependences of the system parameters in the critical region less abrupt. The symmetry of the M–I transition formed by doping is established as opposite to the slightly asymmetric transition induced by compensation. In the case of M–I transition obtained by doping replacement of electron localization on individual impurity centres by the Anderson localization is observed in the critical region while approaching the transition.