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Phonon Assignments in II–VI and III–V Semiconductor Compounds Having Zincblende‐Type Structure
Author(s) -
Ram R. K.,
Kushwaha S. S.,
Shukla A.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221540215
Subject(s) - phonon , raman spectroscopy , semiconductor , critical point (mathematics) , lattice (music) , condensed matter physics , compressibility , chemistry , materials science , physics , optics , thermodynamics , optoelectronics , mathematics , acoustics , mathematical analysis
The lattice infrared absorption and/or Raman spectrum peaks for ZnSe, InP, and GaSb semiconductor compounds having zincblende‐type structure are assigned to calculated critical point phonon frequencies at Γ, X, L, and W critical points. The assignments are consistent with Birman's selection rule and support lattice dynamical results. The reliability of the calculated critical point phonons for these compounds is checked by Brout's sum rule and compressibility and also comparing them with neutron or Raman data.