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Correlation between the Mössbauer and Semiconductor Parameters of Tin Telluride
Author(s) -
Motiejūnas S.,
Baltrūnas D.,
Gečiauskaitė N.,
Makariūnas K.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221540134
Subject(s) - tin , mössbauer spectroscopy , telluride , materials science , semiconductor , lead telluride , mössbauer effect , condensed matter physics , analytical chemistry (journal) , crystallography , chemistry , metallurgy , optoelectronics , physics , doping , organic chemistry
The observed correlation between the 119 Sn Mössbauer isomer shift δ and the hole concentration in tin telluride is explained on the basis of the latest literature data on the peculiarities of the peculiarities of the band structure. It is evaluated that the temperature change from 40 to 400 K should not influence the isomer shift.