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Warm Electron Transport in GaAs Quantum Wells
Author(s) -
Chattopadhyay D.,
Kabasi A.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221540126
Subject(s) - condensed matter physics , electron , quantum well , phonon , range (aeronautics) , scattering , ohmic contact , degeneracy (biology) , quantum , impurity , materials science , physics , atomic physics , optics , quantum mechanics , laser , bioinformatics , electrode , composite material , biology
The transport of warm electrons intinerant two dimensionally in a square quantum well is studied over the temperature range 60 to 300 K, including the degeneracy of the distribution function. Scattering by polar optic phonons, deformation potential acoustic phonons, and ionized impurities is considered. Calculations with GaAs material parameters show that both the ohmic mobility and the warm electron coefficient for a quantum well of width 12 nm are greater than those for a well of width 8 nm.