Premium
Electronic Structure and Properties of Boron Phosphide and Boron Arsenide
Author(s) -
Prasad C.,
Sahay M.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221540118
Subject(s) - boron , dielectric , semiconductor , band gap , condensed matter physics , symmetry (geometry) , electronic band structure , gallium arsenide , arsenide , materials science , electronic structure , indium phosphide , computational chemistry , chemistry , optoelectronics , physics , mathematics , geometry , organic chemistry
The composite wave variational version of the APW method is used to obtain the electronic band structure of the compounds boron phosphide and boron arsenide at the high symmetry points Γ, X, and L. The tight binding interpolation scheme of Slater and Koster is used to calculate the rest of the band structure. The results show that both these materials are indirect band gap semiconductors. The density of states, and the imaginary part of the dielectric constant is also calculated. The theoretical results are compared with the reported experimental and theoretical data.