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Diffusion Studies in CdTe and HgTe
Author(s) -
Madhavan Y.,
Ramachandran K.,
Haridasan T. M.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221540104
Subject(s) - vacancy defect , cadmium telluride photovoltaics , diffusion , lattice diffusion coefficient , ion , lattice (music) , isotope , chemical physics , jump , kinetic isotope effect , chemistry , materials science , crystallography , nanotechnology , atomic physics , physics , thermodynamics , quantum mechanics , effective diffusion coefficient , medicine , organic chemistry , radiology , deuterium , acoustics , magnetic resonance imaging
Lattice dynamical calculations of the jump frequencies for various isotopes of cation and anion in both, CdTe and HgTe, are worked out following the general theory of diffusion for metals by Achar, assuming an active role for vacancy. The isotope effect, which is a measure of the diffusion rate in both the cases, is also deduced. The results indicate that the diffusion in these systems is governed prominently by a single vacancy mechanism as predicted from experiments.