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Resonant Raman Scattering in Zn x Hg 1– x Se
Author(s) -
Kumazaki K.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221530234
Subject(s) - raman scattering , phonon , semiconductor , raman spectroscopy , scattering , photon energy , band gap , x ray raman scattering , materials science , condensed matter physics , photon , infrared , atomic physics , optics , physics , optoelectronics
Raman scattering by phonons is measured in narrow‐gap semiconductor, Zn x Hg 1– x Se, with x = 0 to 0.4 on (100) surface near the E 1 + Δ 1 energy gap at room temperature. Plasmon–LO phonon coupling modes are explained by a model taking into account the two‐mode behaviour of TO phonons. The photon energy dependence of scattering intensity shows a strong enhancement near the E 1 + Δ 1 energy gap. The results obtained from the experiments are compared with the results of Raman scattering, far‐infrared reflection, and ellipsometric measurements of other narrow‐gap semiconductors.