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Localized States in Crystalline Semiconductors
Author(s) -
Kouimtzi S. D.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221530226
Subject(s) - variable range hopping , conductance , condensed matter physics , semiconductor , thermal conduction , materials science , electron , range (aeronautics) , physics , optoelectronics , quantum mechanics , composite material
Hopping conduction is studied in crystalline Si, Ge, InSb, GaAs, and InAs. Sufficient degree of damage induced by electron irradiation allows the observation of conductance by nearest neighbour hopping, or variable range hopping. Evidence of electron‐electron interaction in the hopping conductance is presented.