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Non‐equilibrium velocity autocorrelation function for semiconductors in the presence of trapping phenomena
Author(s) -
Macucci M.,
Pellegrini B.,
Terreni P.,
Reggiani L.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221520222
Subject(s) - autocorrelation , statistical physics , monte carlo method , semiconductor , physics , function (biology) , electric field , field (mathematics) , mathematics , quantum mechanics , statistics , evolutionary biology , biology , pure mathematics
The velocity autocorrelation function is calculated analytically in the presence of an external electric field for a simple model semiconductor when both, generation‐recombination and scattering processes take place. The analytical theory, which follows a standard probability calculation, is complemented by an appropriate Monte Carlo simulation. Both, analytical and numerical results, by accounting for the interaction between different processes, are found to generalize existing approximate solutions. In the presence of increasing fields the velocity autocorrelation function is found to exhibit long‐time tails, due to generation‐recombination processes, as well as a significant increase of the square mean value of the velocity because of the onset of hot‐electron effects.