Photoemission on A       3    II    B       2    V     semiconductor material. Cd 3 As 2 , Zn 3 As 2 , Cd 3 P 2 , Zn 3 P 2  crystals and thin films | Zendy

Hupfer A. | Zendy; Hirsch D. | Zendy; Schulze S. | Zendy

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Photoemission on A 3 II B 2 V semiconductor material. Cd 3 As 2 , Zn 3 As 2 , Cd 3 P 2 , Zn 3 P 2 crystals and thin films

Author(s) -

Hupfer A.,

Hirsch D.,

Schulze S.

Publication year - 1989

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221520213

Subject(s) - x ray photoelectron spectroscopy , valence (chemistry) , analytical chemistry (journal) , crystallography , sputtering , photoemission spectroscopy , chemistry , materials science , thin film , physics , nuclear magnetic resonance , nanotechnology , organic chemistry , chromatography

The density of valence states of sputter‐annealed Cd 3 As 2 , Zn 3 As 2 , (Cd 0.54 Zn 0.46 ) 3 As 2 , Cd 3 P 2 , and Zn 3 P 2 crystals as well as in situ UHV deposited Cd 3 As 2 and Zn 3 P 2 thin films are determined with UV (He/Ne I, II) and X‐ray (Zr Mζ, Al/Mg Kα) photoemission. Some A 3 II B 2 Vvalence electron density of states data reported in literature and measured by X‐ray emission and UP/XP spectroscopy are verified by the experiments. All A 3 II B 2 Vmaterials studied provide UPS/XPS curves, which are qualitatively similar to those reported for A II B VI compounds.

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