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Photoemission on A 3 II B 2 V semiconductor material. Cd 3 As 2 , Zn 3 As 2 , Cd 3 P 2 , Zn 3 P 2 crystals and thin films
Author(s) -
Hupfer A.,
Hirsch D.,
Schulze S.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221520213
Subject(s) - x ray photoelectron spectroscopy , valence (chemistry) , analytical chemistry (journal) , crystallography , sputtering , photoemission spectroscopy , chemistry , materials science , thin film , physics , nuclear magnetic resonance , nanotechnology , organic chemistry , chromatography
Abstract The density of valence states of sputter‐annealed Cd 3 As 2 , Zn 3 As 2 , (Cd 0.54 Zn 0.46 ) 3 As 2 , Cd 3 P 2 , and Zn 3 P 2 crystals as well as in situ UHV deposited Cd 3 As 2 and Zn 3 P 2 thin films are determined with UV (He/Ne I, II) and X‐ray (Zr Mζ, Al/Mg Kα) photoemission. Some A 3 II B 2 Vvalence electron density of states data reported in literature and measured by X‐ray emission and UP/XP spectroscopy are verified by the experiments. All A 3 II B 2 Vmaterials studied provide UPS/XPS curves, which are qualitatively similar to those reported for A II B VI compounds.