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Weak localization effects in n‐type inversion layers of InSb grain boundaries under high hydrostatie pressure
Author(s) -
Kraak W.,
Trott S.,
Herrmann R.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221520210
Subject(s) - grain boundary , magnetoresistance , condensed matter physics , weak localization , scattering , inversion (geology) , materials science , electric field , magnetic field , physics , optics , composite material , geology , microstructure , quantum mechanics , paleontology , structural basin
Abstract Measurements of the low‐field magnetoresistance are reported for an n‐type inversion layer adjacent to the grain boundary in InSb bierystals. At high pressures (ρ > 4 × 10 2 MPa), under the conditions that only one electric subband is populated, a strong negative magnetoresistance appears. From the observed experimental data it is concluded that weak localization effects play an important role in the electronic transport properties of the grain boundary interface. Some characteristic scattering parameters of this two‐dimensional disordered system are determined.