Anomalous magnetic field dependence of electron mobility in anisotropic ferromagnetic semiconductors

The magnetic field dependence of the electron mobility in an easy‐axis ferromagnetic semiconductor is investigated for the case when the magnetic subsystem is described by a Heisenberg Hamil‐tonian with a weak anisotropy. It is found that, under definite conditions, the transversal magnetic field leads to an increase in magnon concentration and, accordingly, to a decrease in the electron mobility, while for isotropic ferromagnetic semiconductors only a decrease of the concentration and an increase of the mobility can take place for increasing magnetic fields.