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Anomalous magnetic field dependence of electron mobility in anisotropic ferromagnetic semiconductors
Author(s) -
Okladnoy Yu. G.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221520124
Subject(s) - condensed matter physics , ferromagnetism , magnetic field , anisotropy , electron mobility , semiconductor , isotropy , electron , magnetic semiconductor , physics , materials science , quantum mechanics
The magnetic field dependence of the electron mobility in an easy‐axis ferromagnetic semiconductor is investigated for the case when the magnetic subsystem is described by a Heisenberg Hamil‐tonian with a weak anisotropy. It is found that, under definite conditions, the transversal magnetic field leads to an increase in magnon concentration and, accordingly, to a decrease in the electron mobility, while for isotropic ferromagnetic semiconductors only a decrease of the concentration and an increase of the mobility can take place for increasing magnetic fields.