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Temperature dependence of carrier trapping in bulk vitreous GeSe 3 from transit time measurements
Author(s) -
Calas J.,
Abdelmaksoud S.,
Averous M.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221520123
Subject(s) - trapping , transit time , range (aeronautics) , materials science , transient (computer programming) , signal (programming language) , atomic physics , sensitivity (control systems) , energy (signal processing) , atmospheric temperature range , analytical chemistry (journal) , physics , optics , chemistry , thermodynamics , electronic engineering , transport engineering , computer science , engineering , composite material , biology , programming language , chromatography , ecology , quantum mechanics , operating system
Transit time measurements in the low signal approximation are reported for bulk vitreous GeSe 3 . The temperature range investigated is 100 to 300 K. The shape of the transient current can only be explained by a model with two trapping centers, a shallow one and a deep one. The shallow level is described by T t1 and T d where T t1 and T d are the times spent in the free state and on the trap, respectively. For the deep level the probability for a carrier reemission is neglected; the time T t2 spent in the free state before trapping is only taken into account. The spectral sensitivity for photocarrier creation is also given with a maximum at 2.7 eV, i.e. higher than the energy of the band gap.