Premium
Theoretical study of the Raman spectrum in a‐Si 1− x N x : H Films
Author(s) -
Yu Gong,
Chen Guanghua,
Zhang Fangqing
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221520108
Subject(s) - raman spectroscopy , phonon , vibrational spectrum , silicon , cluster (spacecraft) , amorphous solid , atomic physics , materials science , amorphous silicon , molecular vibration , spectral line , molecular physics , chemistry , crystallography , physics , condensed matter physics , optics , crystalline silicon , quantum mechanics , computer science , programming language , metallurgy
The vibrational excitations in a‐Si 1− x N x : H films are calculated in terms of a simplified amorphous cluster. The main vibrational modes as well as correlative frequencies and intensities are obtained. By means of a random substitution of nitrogen atoms for silicon atoms the phonon density of states at different x values are deduced. It can be found that the results are in accord with the experimental Raman spectra.