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Volume capture of 1.5 to 5.7 MeV electrons in quantum channeling states
Author(s) -
Kaplin V. V.,
Gridnev V. I.,
Khlabutin V. G.,
Rozum E. I.,
Vorobiev S. A.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221520106
Subject(s) - electron , scattering , bound state , atomic physics , electron capture , volume (thermodynamics) , planar , electron scattering , quantum , physics , crystal (programming language) , molecular physics , nuclear physics , optics , quantum mechanics , computer graphics (images) , computer science , programming language
Abstract Volume capture of (1.5 to 5.7) MeV electrons into the quantum states of planar and axial channeling along (100), (110), (111), and 〈110〉 directions of Si crystal is investigated. The measurements carried out on crystals with the thickness of 2 and 7 μm reveal two different mechanisms for the volume capture: a small‐angle multiple scattering and strong single scattering of electrons. In the former case the near‐barrier weakly bound states are populated basically, in the latter one they are strongly bound states.