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On the Binding Energies of D − States in Doped Germanium. Effects of Valley‐Orbit Corrections and Compressive Uniaxial Stress
Author(s) -
Weber G.,
Oliveira L. E.
Publication year - 1989
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221510221
Subject(s) - germanium , hamiltonian (control theory) , doping , silicon , wave function , electron , physics , stress (linguistics) , condensed matter physics , atomic physics , materials science , chemistry , quantum mechanics , mathematics , optoelectronics , mathematical optimization , linguistics , philosophy
The effects of compressive uniaxial stress along the [111] direction and of valley‐orbit corrections on the binding energies of D − states in Sb‐ and P‐doped germanium are calculated. A variational procedure is used with a Chandrasekhar‐type of variational wave function. The model Hamiltonian takes into account electron‐electron interaction, valley‐orbit corrections, and stress effects. The results show similar behavior as in previous work on doped silicon and quantitatively agree with available long‐wavelength photoconductivity measurements for doped germanium.